Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

نویسندگان

چکیده

Herein, a technological process for the fabrication of n-type doped V-shaped structures on (100) single-crystalline diamond substrates, designed to overcome limitations doping surfaces, is presented. This enhancement can be applied realize electronic power devices such as junction barrier Schottky diode or field effect transistors with low on-resistance. catalytic etching performed by using square-shaped nickel masks surface and annealing in hydrogen atmosphere, resulting formation inverted pyramidal flat {111} sidewalls. The are subsequently overgrown phosphorus-doped achieve facets higher concentrations. Cathodoluminescence studies reveal predominant incorporation phosphorus donors sidewalls structures.

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ژورنال

عنوان ژورنال: Physica Status Solidi A-applications and Materials Science

سال: 2021

ISSN: ['1862-6300', '1862-6319']

DOI: https://doi.org/10.1002/pssa.202000502